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| 2SK1572 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 23 1. Gate 2. Drain 3. Source S 2SK1572 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings 600 30 3 6 3 25 150 -55 to +150 Unit V V A A A W C C 2 2SK1572 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 600 30 -- -- 2.0 -- 1.2 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 3.8 2.0 295 70 12 8 25 65 30 0.9 220 Max -- -- 10 250 3.0 5.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 2 A, VGS = 0 IF = 2 A, VGS = 0, diF/dt = 100 A/s ID = 1 A, VGS = 10 V, RL = 30 Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V * ID = 1 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test 1 3 2SK1572 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area 10 3 Drain Current ID (A) r sa ea n) 10 i th (o = 1 in DS 10 m n by R D s tio d C m ra ite s O pe im (1 pe Ol S is ra PW 10 0 s s 40 1 0.3 0.1 0.03 0.01 tio n ho (T tP C = ul 20 25 se ) C ) Ta = 25C 0 50 100 Case Temperature TC (C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 5 Pulse Test 10 V Drain Current ID (A) 5V 4.5 V 3 4 Typical Transfer Characteristics 5 VDS = 20 V Pulse Test TC = -25C 25C 3 75C 2 1 4 Drain Current ID (A) 2 4V 1 3.5 V VGS = 3 V 0 20 50 10 30 40 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1572 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 5 15 V 2 1 0.5 0.05 VGS = 10 V 12 ID = 2 A 8 4 1A 0.5 A 0 4 12 16 8 20 Gate to Source Voltage VGS (V) 0.1 1 0.5 2 0.2 Drain Current ID (A) 5 Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature 10 VGS = 10 V Pulse Test ID = 2 A 1A Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 5 2 1 0.5 0.2 0.1 VDS = 20 V Pulse Test 8 0.5 A 6 4 Tc = -25C 25C 75C 2 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.05 0.1 0.2 1 0.5 2 Drain Current ID (A) 5 5 2SK1572 Body to Drain Diode Reverse Recovery Time 500 1,000 Ciss Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 200 100 50 20 10 100 Coss 10 Crss 1 di/dt = 100 A/s, VGS = 0 Ta = 25C Pulse Test 5 0.05 0.1 0.2 0.5 2 1 Reverse Drain Current IDR (A) 5 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) Switching Characteristics 20 Gate to Source Voltage VGS (V) 500 200 100 50 VDS VDD = 100 V 250 V 400 V Switching Time t (ns) 400 16 VGS = 10 V, PW = 2 s . duty < 1%, VDD = 30 V . = 300 12 td (off) tf 200 VGS VDD = 400 V 250 V 100 V 4 ID = 2 A 8 4 20 10 5 0.05 tr td (on) 100 0 8 12 16 Gate Charge Qg (nc) 0 20 0.1 0.5 1 2 0.2 Drain Current ID (A) 5 6 2SK1572 Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current IDR (A) Pulse Test 4 3 2 1 5, 10 V 0 VGS = 0, -5 V 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ulse P hot 1S TC = 25C 1.0 ch-c (t) = S (t) * ch-c ch-c = 5.0C/W, TC = 25C PDM PW 1 D = PW T 0.03 T 100 1m 10 m Pulse Width PW (s) 100 m 0.01 10 10 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout Vin 10 V 50 VDD . = 30 V . 10% Vin 10% Waveforms 90% 10% 90% td (off) tf td (on) 90% tr 7 2SK1572 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 8 |
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